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“Background Nowadays, white light-emitting diodes (WLEDs) have attracted significant interest for solid-state illumination due to their low power consumption, long operating time, and environmental benefits [1–3]. Hence,

WLEDs are the most promising alternatives to replace conventional light sources, such as backlighting, interior lamps, and general lightings [4]. Currently, the prevailing method is to use a blue LED coated with a yellow-emitting phosphor. However, during a long period of optical pumping, the degradation of the phosphor

would decline the output efficiency of the WLEDs. Another way to obtain white light is to mix the Gefitinib purchase emissions from different light sources [5]. In particular, InGaN with a continuously variable bandgap from 0.7 to 3.4 eV has attracted considerable interest, and thus, InGaN/GaN WLEDs are regarded as the most promising solid-state lighting device which can work in the whole visible and part of the near UV spectral regions [6]. Some groups have fabricated dichromatic InGaN-based WLEDs [7]. However, compared with WLEDs with a mixture of blue, green and red emissions, they had lower color rendering index. With a direct wide bandgap of 3.37 eV and high exciton A-1210477 nmr binding energy of 60 meV, ZnO is considered as one of the best electroluminescent materials. However, herein lays an obstacle of ZnO homojunction diodes, which is p-type; it is a problem in obtaining high-quality and stable p-ZnO films. Although some p-n homojunction ZnO LEDs have been reported, their electroluminescence (EL) intensities were very weak [8–10]. As an alternative approach, heterostructured LEDs have been fabricated on top of a variety of p-type substrates, such as SrCu2O2[11], Si [12], and GaN [13].